Current-driven writing process in antiferromagnetic Mn2Au for memory applications

TL;DR

This paper demonstrates reversible current-driven Neel vector switching in Mn2Au thin films, enabling stable, low-heating memory devices through domain reorientation driven by spin-orbit torque.

Contribution

It provides a microscopic demonstration of current-induced Neel vector switching in Mn2Au, showing potential for efficient antiferromagnetic memory applications.

Findings

Reversible Neel vector switching in Mn2Au using current pulses

Stable domain patterns suitable for memory devices

Low heating of 20 K during switching

Abstract

Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Neel spin-orbit torque acting on the domain walls.