Observation of inverse Anderson transitions in Aharonov-Bohm topolectrical circuits
Haiteng Wang, Weixuan Zhang, Houjun Sun, and Xiangdong Zhang

TL;DR
This paper reports the experimental observation of inverse Anderson transitions in Aharonov-Bohm topolectrical circuits, demonstrating how specific disorders can induce a transition from localized to extended states, with implications for signal control.
Contribution
First experimental realization of inverse Anderson transitions using Aharonov-Bohm topolectrical circuits with various disorder types.
Findings
Inverse Anderson transitions observed via impedance and voltage measurements.
Disorder types influence flat band localization and transition behavior.
A platform for studying geometric and Anderson localization interplay.
Abstract
It is well known that Anderson transition is a disorder-induced metal-insulator transition.Contrary to this conventional wisdom, some investigations have shown that disorders could destroy the phase coherence of localized modes in flatbands, making the localized states melt into extended states. This phenomenon is called the inverse Anderson transition. While, to date, the experimental observation of inverse Anderson transitions is still lacking. In this work, we report the implementation of inverse Anderson transitions based on Aharonov-Bohm topolectrical circuits. Different types of disorders, including symmetric-correlated, antisymmetric-correlated and uncorrelated disorders, can be easily implemented in Aharonov-Bohm circuits by engineering the spatial distribution of ground settings. Through the direct measurements of frequency-dependent impedance responses and time-domain voltage…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Advanced Physical and Chemical Molecular Interactions · Molecular Junctions and Nanostructures
