Intrinsic Nonlinear Planar Hall Effect

TL;DR

This paper introduces an intrinsic nonlinear planar Hall effect arising from band geometry, which is independent of scattering and applicable to various nonmagnetic crystals, with potential for material characterization and device applications.

Contribution

It proposes a new intrinsic nonlinear Hall effect based on band geometry, supported by first-principles calculations and experimental measurements in Janus MoSSe monolayers.

Findings

Effect is less symmetry constrained than other nonlinear effects.

Supported by first-principles calculations and experiments.

Observable in nonmagnetic polar and chiral crystals.

Abstract

We propose an intrinsic nonlinear planar Hall effect, which is of band geometric origin, independent of scattering, and scales with the second order of electric field and first order of magnetic field. We show that this effect is less symmetry constrained compared to other nonlinear transport effects and is supported in a large class of nonmagnetic polar and chiral crystals. Its characteristic angular dependence provides an effective way to control the nonlinear output. Combined with first-principles calculations, we evaluate this effect in the Janus monolayer MoSSe and report experimentally measurable results. Our work reveals an intrinsic transport effect, which offers a new tool for material characterization and a new mechanism for nonlinear device application.