Utilizing photonic band gap in triangular silicon carbide structures for efficient quantum nanophotonic hardware

TL;DR

This paper investigates the photonic band gap properties of triangular silicon carbide structures to enhance quantum nanophotonic devices, proposing specific applications for improved emission collection and mode filtering in quantum hardware.

Contribution

It introduces the formation of photonic band gaps in triangular silicon carbide structures and proposes their use in filters and mirrors for quantum photonics.

Findings

Photonic band gaps can be formed in triangular SiC structures.

Proposed TE and TM pass filters for mode selection.

Designed photonic crystal mirror for efficient emission collection.

Abstract

Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing, and sensing rely on the efficient collection of color center emission into a single optical mode. Recent hardware development in this platform has focused on angle-etching processes that preserve emitter properties and produce triangularly shaped devices. However, little is known about the light propagation in this geometry. We explore the formation of photonic band gap in structures with a triangular cross-section, which can be used as a guiding principle in developing efficient quantum nanophotonic hardware in silicon carbide. Furthermore, we propose applications in three areas: the TE-pass filter, the TM-pass filter, and the highly reflective photonic crystal mirror, which can be utilized for efficient collection and propagating mode selection of light emission.