Critical role of terminating layer in formation of 2DEG state at the $LaInO_{3}$/$BaSnO_{3}$ interface
Seonghyeon Kim, Mikk Lippmaa, Jaehyeok Lee, Hyeongmin Cho, Juhan Kim,, Bongju Kim, Kookrin Char

TL;DR
This study reveals that the formation of a 2DEG at the LaInO3/BaSnO3 interface critically depends on the terminating layer of the BaSnO3 surface, with SnO2 termination being essential for 2DEG emergence, supporting the interface polarization model.
Contribution
It demonstrates experimentally that only SnO2-terminated BaSnO3 surfaces lead to 2DEG formation at LaInO3/BaSnO3 interfaces, highlighting the importance of surface termination in 2DEG engineering.
Findings
2DEG forms only with SnO2-terminated BaSnO3 surface
Surface termination was controlled via additional SnO2 deposition
CAICISS confirmed the termination layer composition
Abstract
Based on the interface polarization model, the two-dimensional electron gas (2DEG) at (LIO)/(BSO) interfaces is understood to originate from a polarization discontinuity at the interface and the conduction band offset between LIO and BSO. In this scenario, the direction of polarization at the interface is determined by whether the first atomic LIO layer at the interface is LaO or InO. We investigate the role of the terminating layer at the LIO/BSO interface in creating the 2DEG. Based on conductance measurements of our in-situ grown LIO/BSO heterostructures, we report in this work that the 2DEG only forms when the BSO surface is terminated with a SnO layer. We controlled the terminating layer by additional SnO deposition on the BSO surface. We show that the as-grown BSO surface has a mixed terminating layer of BaO and SnO while the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor materials and devices · Magnetic and transport properties of perovskites and related materials
