Raman Scattering with infrared excitation resonant with MoSe$_2$ indirect band gap
Simone Sotgiu, Tommaso Venanzi, Francesco Macheda, Elena Stellino,, Michele Ortolani, Paolo Postorino, Leonetta Baldassarre

TL;DR
This study explores resonance Raman scattering in MoSe₂ across various laser energies, revealing how resonance effects enhance high-order phonon modes at specific energies and how temperature influences these resonances.
Contribution
It provides a detailed analysis of two-phonon modes and their coupling with electrons at different excitation energies, highlighting the role of the indirect band gap in resonance phenomena.
Findings
High-order Raman modes are strongly enhanced at 1.16 eV excitation energy.
Two-phonon modes originate mainly from opposite momenta phonons.
Lowering temperature suppresses resonance-enhanced modes due to band gap increase.
Abstract
Resonance Raman scattering, which probes electrons, phonons and their interplay in crystals, is extensively used in two-dimensional materials. Here we investigate Raman modes in MoSe at different laser excitation energies from 2.33 eV down to the near infrared 1.16 eV. The Raman spectrum at 1.16 eV excitation energy shows that the intensity of high-order modes is strongly enhanced if compared to the first-order phonon modes intensity due to resonance effects with the MoSe indirect band gap. By comparing the experimental results with the two-phonon density of states calculated with density functional theory, we show that the high-order modes originate mostly from two-phonon modes with opposite momenta. In particular, we identify the momenta of the phonon modes that couple strongly with the electrons to produce the resonance process at 1.16 eV, while we verify that at 2.33 eV the…
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Taxonomy
Topics2D Materials and Applications
