Stacking-induced Chern insulator

TL;DR

This paper demonstrates that stacking two modified Haldane models in AB configuration induces a Chern insulator with a Chern number of ±2, featuring chiral edge states, while AA stacking remains topologically trivial.

Contribution

It reveals that stacking two time-reversed modified Haldane models in AB configuration creates a novel Chern insulator with higher Chern number, a phenomenon not previously reported.

Findings

AB stacking induces a Chern number of ±2

Chiral edge states appear in AB-stacked bilayers

AA stacking does not produce topological phases

Abstract

Graphene can be turned into a semimetal with broken time-reversal symmetry by adding a valley-dependent pseudo-scalar potential that shifts the Dirac point energies in opposite directions, as in the modified Haldane model. We consider a bilayer obtained by stacking two time-reversed copies of the modified Haldane model, where conduction and valence bands cross to give rise to a nodal line in each valleys. In the AB stacking, the interlayer hopping lifts the degeneracy of the nodal lines and induces a band repulsion, leading surprisingly to a chiral insulator with a Chern number $C=\pm2$. As a consequence a pair of chiral edge states appears at the boundaries of the ribbon bilayer geometry. In contrast, the AA stacking does not show nontrivial topological phases. We discuss possible experimental implementations of our results.