Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$

TL;DR

This study investigates the electronic and topological properties of SrAl$_2$Si$_2$, revealing large nonsaturating magnetoresistance, weak anti-localization, and evidence of non-trivial topological states through experiments and calculations.

Contribution

It provides new insights into the topological and magnetotransport properties of SrAl$_2$Si$_2$, combining experimental data with first-principle calculations.

Findings

Maximum magnetoresistance of 459% at 2 K and 12 T

Observation of weak anti-localization signatures

Presence of two types of charge carriers with low density

Abstract

We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and cusp-like magneto-conductivity. The maximum value of magnetoresistance turns out to be 459\% at 2 K and 12 T. The analysis of the cusp-like feature in magneto-conductivity indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in SrAl$_2$Si$_2$, with low carrier density.