Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime

TL;DR

This study investigates how hydrogen annealing influences electron spin transport, scattering mechanisms, and spin lifetime in a silicon-based two-dimensional inversion channel, providing insights for spintronic device optimization.

Contribution

It reveals the effects of hydrogen annealing on spin scattering mechanisms and enhances understanding of spin lifetime in silicon inversion channels.

Findings

Hydrogen annealing reduces spin scattering in silicon channels.

Spin lifetime is significantly affected by annealing conditions.

The study offers guidance for improving spintronic device performance.

Abstract

Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan