The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 hetero-junction: A first-principles study

TL;DR

This study uses DFT calculations to analyze how different types, locations, and densities of point defects in monolayer MoS2 influence the Schottky barrier height of Au/MoS2 heterojunctions, providing insights for defect engineering.

Contribution

It systematically investigates the impact of defect type, position, and concentration on SBH, offering new guidelines for optimizing heterojunctions through defect engineering.

Findings

Defects universally increase SBH compared to defect-free MoS2.

S divacancy and MoS antisite defects cause larger SBH increases than S monovacancy.

Inner sublayer defects near Au significantly raise SBH.

Abstract

Using DFT calculations, we investigate the effects of the type, location, and density of point defects in monolayer MoS2 on electronic structures and Schottky barrier heights (SBH) of Au/MoS2 heterojunction. Three types of point defects in monolayer MoS2, that is, S monovacancy, S divacancy and MoS (Mo substitution at S site) antisite defects, are considered. The following findings are revealed: (1) The SBH for the monolayer MoS2 with defects is universally higher than that for its defect-free counterpart. (2) S divacancy and MoS antisite defects increase the SBH to a larger extent than S monovacancy. (3) A defect located in the inner sublayer of MoS2, which is adjacent to Au substrate, increases the SBH to a larger extent than that in the outer sublayer of MoS2. (4) An increase in defect density increases the SBH. These findings indicate a large variation of SBH with the defect type, location, and concentration. We also compare our results with previously experimentally measured SBH for Au/MoS2 contact and postulate possible reasons for the large differences among existing experimental measurements and between experimental measurements and theoretical predictions. The findings and insights revealed here may provide practice guidelines for modulation and optimization of SBH in Au/MoS2 and similar heterojunctions via defect engineering.