Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

TL;DR

This study investigates how proton irradiation affects dark count rates in 150-nm CMOS SPADs, exploring damage mitigation and space application suitability.

Contribution

It provides experimental data on proton-induced degradation of CMOS SPADs and evaluates mitigation strategies and space mission applicability.

Findings

Proton irradiation increases dark count rates in CMOS SPADs.

Annealing and cooling can partially mitigate damage effects.

Device suitability varies across different space mission scenarios.

Abstract

Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.