Approaching Petavolts per meter plasmonics using structured semiconductors
Aakash A. Sahai, M. Golkowski, T. Katsouleas, G. Andonian, G. White,, C. Joshi, P. Taborek, V. Harid, J. Stohr

TL;DR
This paper introduces a novel class of ultra-strong plasmonic modes in structured semiconductors, capable of generating Petavolts per meter electromagnetic fields, with potential transformative impacts in high-field physics.
Contribution
It demonstrates how structured semiconductors can be tuned to excite relativistic surface plasmons with unprecedented field strengths, revealing new phenomena and enabling Petavolts per meter plasmonics.
Findings
Relativistic oscillations of the Fermi electron gas in semiconductors.
Ballistic electron transport and unconventional heat deposition.
Potential for Petavolts per meter electromagnetic fields.
Abstract
A new class of strongly excited plasmonic modes that open access to unprecedented Petavolts per meter electromagnetic fields promise wide-ranging, transformative impact. These modes are constituted by large amplitude oscillations of the ultradense, delocalized free electron Fermi gas which is inherent in conductive media. Here structured semiconductors with appropriate concentration of n-type dopant are introduced to tune the properties of the Fermi gas for matched excitation of an electrostatic, surface "crunch-in" plasmon using readily available electron beams of ten micron overall dimensions and hundreds of picoCoulomb charge launched inside a tube. Strong excitation made possible by matching results in relativistic oscillations of the Fermi electron gas and uncovers unique phenomena. Relativistically induced ballistic electron transport comes about due to relativistic multifold…
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Taxonomy
TopicsAtomic and Molecular Physics · Quantum and electron transport phenomena · Gyrotron and Vacuum Electronics Research
