Data-driven solutions of ill-posed inverse problems arising from doping reconstruction in semiconductors
Stefano Piani, Patricio Farrell, Wenyu Lei, Nella Rotundo and, Luca Heltai

TL;DR
This paper develops and compares data-driven neural network methods to solve ill-posed inverse problems for estimating doping profiles in semiconductors from photovoltaic measurements, achieving improved accuracy over traditional methods.
Contribution
The paper introduces three neural network-based approaches for reconstructing doping profiles from photovoltaic data, demonstrating their effectiveness on synthetic data and analyzing robustness and hyperparameter effects.
Findings
Neural networks halve the error compared to least squares.
Data-driven methods achieve around 5% error.
Approaches are robust to noise and hyperparameter variations.
Abstract
The non-destructive estimation of doping concentrations in semiconductor devices is of paramount importance for many applications ranging from crystal growth, the recent redefinition of the 1kg to defect, and inhomogeneity detection. A number of technologies (such as LBIC, EBIC and LPS) have been developed which allow the detection of doping variations via photovoltaic effects. The idea is to illuminate the sample at several positions and detect the resulting voltage drop or current at the contacts. We model a general class of such photovoltaic technologies by ill-posed global and local inverse problems based on a drift-diffusion system that describes charge transport in a self-consistent electrical field. The doping profile is included as a parametric field. To numerically solve a physically relevant local inverse problem, we present three different data-driven approaches, based on…
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Taxonomy
TopicsIndustrial Vision Systems and Defect Detection · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques
