Selective Laser Reaction Synthesis of SiC, Si$_3$N$_4$ and HfC/SiC Composites for Additive Manufacturing

TL;DR

This paper explores selective laser reaction sintering (SLRS) for producing non-oxide ceramics like SiC, Si3N4, and HfC/SiC composites suitable for additive manufacturing, focusing on process optimization and microstructure control.

Contribution

It introduces a novel SLRS method for in-situ synthesis of non-oxide ceramics compatible with powder bed fusion additive manufacturing.

Findings

Successful formation of near net-shape SiC and SiC composites.

Optimized precursor ratios minimized internal stresses and cracking.

Microstructure quality was improved through process parameter adjustments.

Abstract

Selective laser reaction sintering techniques (SLRS) techniques were investigated for the production of near net-shape non-oxide ceramics including SiC, Si$_3$N$_4$, and HfC/SiC composites that might be compatible with prevailing powder bed fusion additive manufacturing processes. Reaction bonded layers of covalent ceramics were produced using in-situ reactions that occur during selective laser processing and layer formation. During SLRS, precursor materials composed of metal and/or metal oxide powders were fashioned into powder beds for conversion to non-oxide ceramic layers. Laser-processing was used to initiate simultaneous chemical conversion and local interparticle bonding of precursor particles in CH4 or NH3 gases. Several factors related to the reaction synthesis process (precursor chemistry, gas-solid and gas-liquid synthesis mechanisms, precursor vapor pressures) were investigated in relation to resulting microstructures and non-oxide yields. Results indicated that the volumetric changes which occurred during in-situ conversion of single component precursors negatively impacted the surface layer microstructure. To circumvent the internal stresses and cracking that accompanied the conversion of Si or Hf (that expands upon conversion) or SiO$_x$ (that contracts during conversion), optimized ratios of the precursor constituents were used to produce near isovolumetric conversion to the product phase. The results demonstrate that under appropriate processing conditions and precursor selection, the formation of near net-shape SiC and SiC composites might be achieved through single-step AM-compatible techniques.