Electrically function switchable magnetic domain-wall memory

TL;DR

This paper presents a novel magnetic domain-wall memory that can switch between rewritable and read-only states using electrical pulses, enhancing data security and functionality in spintronic devices.

Contribution

The authors demonstrate a new electrically switchable magnetic memory that transitions between rewritable and read-only modes, a feature not previously reported in the field.

Findings

Successfully achieved electrical switching between memory states

Fabricated wafer-scale switchable memory arrays on 4-inch substrates

Confirmed data security features with bit-level storage modes

Abstract

More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data from being tampered with. However, no such switchable memory has been reported. We demonstrated the rewritable function can be converted into a read-only function by a sufficiently large current pulse in a U-shaped domain-wall memory composed of an asymmetric Pt/Co/Ru/AlOx heterostructure with strong Dzyaloshinskii-Moriya interaction. Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2 substrate were designed and fabricated. Furthermore, we confirmed the information can be stored in rewritable or read-only state at bit-level according to the security-needs of end-users. Our work not only provides a solution for personal confidential data, but also paves the way for developing multi-functional spintronic devices.