A first-principles calculation of electron-phonon interactions for the $\text{C}_2\text{C}_\text{N}$ and $\text{V}_\text{N}\text{N}_\text{B}$ defects in hexagonal boron nitride
Kenneth Sharman, Omid Golami, Stephen Wein, Hadi Zadeh-Haghighi,, Claudia Gomes da Rocha, Alexander Kubanek, Christoph Simon

TL;DR
This study uses density functional theory to analyze electron-phonon interactions in specific defects of hexagonal boron nitride, aiming to understand their potential as room-temperature quantum emitters with narrow spectral lines.
Contribution
It introduces a DFT-based approach to determine electron-phonon coupling in h-BN defects with different dipole orientations, providing insights into their suitability for quantum photonics.
Findings
C2C_N defect has an in-plane transition dipole
VN_NB defect has a perpendicular transition dipole
Out-of-plane dipoles are not sufficient for FT-limited photons at room temperature
Abstract
Quantum emitters in two-dimensional hexagonal boron nitride (h-BN) have generated significant interest due to observations of ultra-bright emission made at room temperature. The expectation that solid-state emitters exhibit broad zero-phonon lines at elevated temperatures has been put in question by recent observations of Fourier transform (FT) limited photons emitted from h-BN flakes at room temperature. The mechanism responsible for the narrow lines has been suggested to be a mechanical decoupling from in-plane phonons due to an out-of-plane distortion of the emitter's orbitals. All decoupled emitters produce photons that are directed in-plane, suggesting that the dipoles are oriented perpendicular to the h-BN plane. Motivated by the promise of an efficient and scalable source of indistinguishable photons that can operate at room temperature, we have developed an approach using…
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Taxonomy
TopicsDiamond and Carbon-based Materials Research · Graphene research and applications · Boron and Carbon Nanomaterials Research
