Microcavities integrated in metal halide perovskite light-emitting field-effect transistors

TL;DR

This paper explores integrating microcavities with metal halide perovskite light-emitting transistors to engineer electrically driven lasers, using simulations to optimize cavity modes at 750 nm for improved light emission.

Contribution

It proposes a novel integration of photonic microcavities with perovskite light-emitting transistors to enable laser-like emission, supported by optical simulations of cavity properties.

Findings

Microcavities can be tuned to the emission wavelength of perovskite devices.

Simulation results show potential for cavity mode enhancement at 750 nm.

Design considerations include material choices for microcavity architecture.

Abstract

Metal halide perovskites are materials that show unique characteristics for photovoltaics and light emission. Amplified spontaneous emission and stimulated emission has been shown with these materials, together with electroluminescence in light-emitting diodes and light-emitting transistors. An important achievement that combine stimulated emission and electroluminescence could be the fabrication of electrically driven metal halide perovskite lasers. In this work, the integration of metal halide perovskite light-emitting field-effect transistors with photonic microcavities is proposed. This can lead to the engineering of electrically driven lasers. The microcavities have been designed in order to have the cavity mode at 750 nm, which is the peak wavelength of the electroluminescent spectrum of recently reported MaPbI3-based electroluminescent devices. The optical properties of the photonic microcavities have been simulated by means of the transfer matrix method, considering the wavelength dependent refractive indexes of all the materials involved. The material for the gate is indium tin oxide, while different materials, either inorganic or organic, have been considered for the microcavity architectures.