High Photoluminescence Intensity of Heterostructure AlGaN-based DUV-LED through Uniform Carrier Distribution

TL;DR

This paper demonstrates through numerical analysis that uniform carrier distribution in AlGaN-based DUV-LEDs significantly boosts photoluminescence intensity, achieving at least 300% higher emission compared to non-uniform structures.

Contribution

It introduces a design with a thin step-shaped quantum well that ensures uniform carrier distribution, markedly improving radiative recombination and light emission in DUV-LEDs.

Findings

Uniform carrier distribution increases PL intensity by at least 300%.

A thin step-shaped quantum well enhances radiative recombination.

Simulated emission wavelength is 302.874 nm in the UV-B spectrum.

Abstract

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and photoluminescence (PL). Three different structures with different Al compositions are compared and analyzed. The radiative recombination of the DUV-LED is less efficient due to the imbalance of carrier distribution. The findings show that the uniform electrons and holes distribution significantly improve the radiative recombination for structure with a thin step-shaped quantum well (QW). The simulated structure emits a wavelength of 302.874 nm, categorized in the ultraviolet-B (UV-B) spectrum. Our results imply that carrier uniformity in QW is required to enhance the light intensity of DUV-LED. Remarkably, the uniformity enhances the PL intensity drastically, at least 300% higher than the other structures.