Engineering Surface Oxygen Vacancies in $\mathrm{SrTiO_3}$ to Form a High Mobility and Transparent Quasi Two dimensional Electron System
Shyam Sundar Yadav, Shelender Kumar, Pankaj Kumar, Ananth, Venkatesan

TL;DR
This paper demonstrates a novel low-energy plasma method to engineer surface oxygen vacancies in SrTiO3, creating a high-mobility, transparent quasi-2D electron system with quantum oscillations and tunable confinement, suitable for optoelectronic applications.
Contribution
It introduces a new plasma-based technique to control surface oxygen vacancies in SrTiO3, enabling high mobility, transparency, and quantum phenomena in the resulting electron system.
Findings
Achieved electron mobility up to 20,000 cm^2V^{-1}s^{-1}.
Observed quantum oscillations and Kondo-like behavior under certain conditions.
Produced a transparent, lithographically patternable conductor with competitive figure of merit.
Abstract
Quasi-two-dimensional electron systems (q-2DES) are formed in various hetero-structures, including oxide interfaces. Oxygen vacancies (OVs) in oxides like are known to produce electronic carriers. A novel way to produce on the surface using a low-energy plasma is shown here. It results in a q-2DES with mobility as high as , displaying quantum oscillations in magneto-resistance. We can achieve a sharper or weaker confinement potential by adjusting the process pressure. The system with sharper confinement displays clearer quantum oscillations and Kondo-like temperature dependence of resistance. OVs close to the surface behaving like a correlated Anderson impurity is responsible for the Kondo behaviour. Quantum oscillations are less prominent in the weakly confined system. A cross-over from…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Quantum and electron transport phenomena · Semiconductor materials and devices
