Charge carriers trapping by the full-configuration defects in metal halide perovskites quantum dots

TL;DR

This paper develops a comprehensive model to analyze charge carrier trapping by various defects in metal halide perovskite quantum dots, providing insights into trapping mechanisms and influencing factors for device optimization.

Contribution

It introduces a full-configuration defect model incorporating defect species, depth, and lattice relaxation, advancing understanding of trapping processes in MHPQDs.

Findings

Identified fastest trapping channels for charge carriers.

Showed trapping time dependence on quantum dot radius, defect depth, and temperature.

Enhanced understanding of defect-related charge trapping in MHPQDs.

Abstract

Metal halide perovskites quantum dots (MHPQDs) have aroused enormous interesting in the photovoltaic and photoelectric because of their marvelous properties and size characteristics. However, one of key problems that how to systematically analyze charge carriers trapping by different defects is still a challenge task. Here, we study nonradiation multiphonon processes of the charge carrier trapping by various defects in MHPQDs based on the well-known Huang-Rhys model, in which a method of fullconfiguration defect, including different defect species with variable depth and lattice relaxation strength, is developed by introducing a localization parameter in the quantum defect model. With the help of this method, these fastest trapping channels for charge carriers transferring from the quantum dot ground state to different defects are found. Furthermore, the dependences of the trapping time on the radius of quantum dot, the defect depth and temperature are given. These results not only enrich the knowledge of charge carrier trapping processes by defects, but enlighten the designs of MHPQDs-based photovoltaic and photoelectric devices.