A Multiscale Simulation Approach for Germanium-Hole-Based Quantum Processor

TL;DR

This paper introduces a multiscale simulation approach for modeling germanium-hole-based quantum dot arrays, enabling analysis of quantum gate operations and circuit performance with promising implications for quantum computing.

Contribution

The paper presents a novel multiscale simulation method that combines numerical and analytical models to evaluate germanium-hole quantum dot arrays for quantum processors.

Findings

Faster two-qubit gate speeds compared to silicon-based systems

Reduced process variability and less stringent feature size requirements

High potential for high-fidelity quantum chemistry simulations

Abstract

A multiscale simulation method is developed to model a quantum dot (QD) array of germanium (Ge) holes for quantum computing. Guided by three-dimensional numerical quantum device simulations of QD structures, an analytical model of the tunnel coupling between the neighboring hole QDs is obtained. Two-qubit entangling quantum gate operations and quantum circuit characteristics of the QD array processor are then modeled. Device analysis of two-qubit Ge hole quantum gates demonstrates faster gate speed, smaller process variability, and less stringent requirement of feature size, compared to its silicon counterpart. The multiscale simulation method allows assessment of the quantum processor circuit performance from a bottom-up, physics-informed perspective. Application of the simulation method to the Ge QD array processor indicates its promising potential for preparing high-fidelity ansatz states in quantum chemistry simulations.