Theoretical study of small signal modulation behavior of Fabry-Perot Germanium-on-Silicon lasers

TL;DR

This paper models and simulates the small signal modulation behavior of Fabry-Perot Ge-on-Si lasers, analyzing how structural parameters affect bandwidth and predicting a maximum 3dB bandwidth of 33.94 GHz.

Contribution

It provides a theoretical analysis and simulation results on the modulation bandwidth dependence of Ge-on-Si lasers, optimizing structure parameters for improved performance.

Findings

3dB bandwidth of 33.94 GHz predicted after optimization

Bandwidth depends on poly-Si cladding, Ge cavity dimensions, and carrier lifetime

Optimal structure parameters enhance laser modulation performance

Abstract

This work investigated the small signal performance of Fabry-Perot Ge-on-Si lasers by modeling and simulations. The 3dB bandwidth dependence on the structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority carrier lifetime were studied. A 3dB bandwidth of 33.94 GHz at a biasing current of 270.5 mA is predicted after Ge laser structure optimization with a defect limited carrier lifetime of 1 ns.