Comprehensive structural changes in nanoscale-deformed silicon modelled with an integrated atomic potential
Rafa{\l} Abram, Dariusz Chrobak, Jesper Byggm\"astar, Kai H. Nordlund,, Roman Nowak

TL;DR
This study models nanoscale deformation in silicon using a novel combination of atomic potentials, successfully replicating complex phase transitions and dislocation activities observed experimentally, which previous potentials could not achieve.
Contribution
The paper introduces an integrated potential approach combining Tersoff and Stillinger-Weber potentials to accurately simulate silicon's complex deformation processes.
Findings
Successfully modeled silicon's phase transitions during deformation
Replicated dislocation generation consistent with experimental observations
Validated the potential merging approach on germanium's phase change
Abstract
In spite of remarkable developments in the field of advanced materials, silicon remains one of the foremost semiconductors of the day. Of enduring relevance to science and technology is silicon's nanomechanical behaviour including phase transformation, amorphization and dislocations generation, particularly in the context of molecular dynamics and materials research. So far, comprehensive modelling of the whole cycle of events in silicon during nanoscale deformation has not been possible, however, due to the limitations inherent in the existing interatomic potentials. This paper examines how well an unconventional combination of two well-known potentials - the Tersoff and Stillinger-Weber - can perform in simulating that complexity. Our model indicates that an irreversible deformation of silicon (Si-I) is set in motion by a transformation to a non-diamond structure (Si-nd), and followed…
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Taxonomy
TopicsAdvanced Surface Polishing Techniques · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
