Memristive and tunneling effects in 3D interconnected silver nanowires

TL;DR

This paper presents a 3D interconnected silver nanowire network exhibiting memristive and tunneling effects, fabricated via electrodeposition, with potential applications in neuromorphic computing due to its adaptive resistance properties.

Contribution

The study introduces a novel 3D Ag-NW network with memristive behavior and tunneling effects, fabricated through a bottom-up electrodeposition method.

Findings

The network shows high initial resistance and memristive behavior.

Resistance switches from GOhm to kOhm regimes after cycles.

Conducts via creation/destruction of silver filaments.

Abstract

Due to their memristive properties nanowire networks are very promising for neuromorphic computing applications. Indeed, the resistance of such systems can evolve with the input voltage or current as it confers a synaptic behaviour to the device. Here, we propose a network of silver nanowires (Ag-NWs) which are grown in a nanopourous membrane with interconnected nanopores by electrodeposition. This bottom-up approach fabrication method gives a conducting network with a 3D architecture and a high density of Ag-NWs. The resulting 3D interconnected Ag-NW network exhibits a high initial resistance as well as a memristive behavior. It is expected to arise from the creation and the destruction of conducting silver filaments inside the Ag-NW network. Moreover, after several cycles of measurement, the resistance of the network switches from a high resistance regime, in the GOhm range, with a tunnel conduction to a low resistance regime, in the kOhm range.