Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy

TL;DR

This study demonstrates a non-destructive, depth-resolved method using differential aperture X-ray microscopy to map residual strain fields in high electron mobility transistors, revealing effects of gamma irradiation on GaN layers.

Contribution

It introduces the application of DAXM for depth-resolved strain mapping in HEMTs, enabling detailed analysis of residual stress at sub-micrometer scales.

Findings

Gamma irradiation reduces lattice spacing in GaN layers.

DAXM provides high-resolution, non-destructive strain measurements.

Strain concentrations are characterized in pristine and irradiated devices.

Abstract

Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for characterization of these concentrations is that they exist over sub-$\mu$m length-scales, precluding their characterization by more traditional residual stress measurement techniques. Here we demonstrate the use of synchrotron X-ray -based differential aperture X-ray microscopy (DAXM) as a viable, non-destructive means to characterize these stress and strain concentrations in a depth-resolved manner. DAXM is used to map two-dimensional strain fields between source and drain in a gallium nitride (GaN) layer within high electron mobility transistors (HEMTs) with sub-$\mu$m spatial resolution. Strain fields at various positions in both pristine and irradiated HEMT specimens are presented in addition to a preliminary stress analysis to estimate the distribution of various stress components within the GaN layer. $\gamma$-irradiation is found to significantly reduce the lattice plane spacing in the GaN along the sample normal direction which is attributed to radiation damage in transistor components bonded to the GaN during irradiation.