Biaxial growth of pentacene on rippled silica surfaces studied by rotating grazing incidence X-ray diffraction
Stefan Pachmajer, Oliver Werzer, Carlo Mennucci, Francesco Buatier de, Mongeot, R. Resel

TL;DR
This study investigates the biaxial growth of pentacene on rippled silica surfaces, revealing how substrate-induced alignment influences phase transition and crystal structure development in thin films.
Contribution
It demonstrates the formation of biaxially oriented pentacene crystals on rippled silica, elucidating the microscopic mechanism of phase transition from thin film to bulk structure.
Findings
Biaxial orientation of pentacene crystals on rippled surfaces.
Epitaxial relationship between thin film phase and bulk crystal.
Mechanism for transition from metastable to equilibrium phase.
Abstract
Pentacene is known to grow on isotropic silicon oxide surfaces in a substrate-induced phase with fiber textured crystallites. This growth study reports on the growth of pentacene crystallites on uniaxially oriented surfaces. Silica substrates have been treated by ion beam sputtering so that ripples with a lateral corrugation length of 38 nm and a surface roughness of 1.3 nm are formed. Pentacene thin films with a nominal thickness in the range from 20 nm up to 300 nm are deposited on top of the rippled surfaces. The films are characterized by atomic force microscopy and grazing incidence X-ray diffraction. Bi-axially oriented crystals are formed due to the grooves of the substrate surface opening up the possibility of a defined in-plane alignment of the crystals. In a first stage of thin film growth, the thin film phase (TFP) of pentacene is formed, while in the later stage the bulk…
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