Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

TL;DR

This paper introduces a novel Landauer-Büttiker-based extraction method to accurately characterize Schottky barrier heights in multi-channel 1D FETs, outperforming traditional activation energy approaches.

Contribution

It develops and validates a new methodology for extracting barrier heights in 1D FETs, considering quantum effects and multiple channels, improving accuracy over conventional methods.

Findings

The new method provides higher barrier height estimates than traditional activation energy techniques.

Numerical simulations confirm the improved accuracy of the Landauer-Büttiker-based approach.

A proposed test structure enhances measurement precision for device characterization.

Abstract

The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated across different carbon nanotube and nanowire device technologies by means of a Landauer-B\"uttiker-based extraction methodology (LBM) adapted for multiple 1D-channels. The extraction methodology yields values for an effective Schottky barrier height and a gate coupling coefficient, an indicator of the device working at the quantum capacitance limit. The novel LBM-based approach embracing the mechanisms in 1D electronics is compared to the conventional activation energy method not considering such effects. The latter approach underestimates the potential barrier height at metal-channel interfaces in comparison to the novel methodology. A test structure based on a displaced gate device is proposed based on numerical device simulation results towards an improved accuracy of the method.