Modeling and Predicting Transistor Aging under Workload Dependency using Machine Learning
Paul R. Genssler, Hamza E. Barkam, Karthik Pandaram, Mohsen Imani,, Hussam Amrouch

TL;DR
This paper introduces a machine learning approach to accurately predict transistor aging based on workload and voltage, offering a faster, confidential, and accessible alternative to complex physics-based models for circuit designers.
Contribution
It presents a novel ML model that replicates physics-based aging models without revealing confidential parameters, enabling efficient design optimization.
Findings
Mean relative error as low as 1.7%
Speedup of up to 20X over traditional models
Successful generalization from one circuit to benchmark circuits
Abstract
The pivotal issue of reliability is one of colossal concern for circuit designers. The driving force is transistor aging, dependent on operating voltage and workload. At the design time, it is difficult to estimate close-to-the-edge guardbands that keep aging effects during the lifetime at bay. This is because the foundry does not share its calibrated physics-based models, comprised of highly confidential technology and material parameters. However, the unmonitored yet necessary overestimation of degradation amounts to a performance decline, which could be preventable. Furthermore, these physics-based models are exceptionally computationally complex. The costs of modeling millions of individual transistors at design time can be evidently exorbitant. We propose the revolutionizing prospect of a machine learning model trained to replicate the physics-based model, such that no confidential…
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Taxonomy
TopicsSemiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
