Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices

TL;DR

This study demonstrates that atomically thin AlN/GaN digital-alloy superlattices exhibit superior electronic and phonon-limited mobility, leading to a higher modified Baliga figure of merit compared to traditional AlGaN alloys and other wide-bandgap materials.

Contribution

The paper introduces first-principles calculations showing enhanced mobility and figure of merit in atomically thin AlN/GaN superlattices, surpassing random alloys and other wide-bandgap semiconductors.

Findings

Band gap of 4.8 eV in superlattices.

In-plane mobility of 369 cm$^2$ V$^{-1}$ s$^{-1}$.

Highest modified Baliga figure of merit among studied materials.

Abstract

Alloy scattering in random AlGaN alloys drastically reduces the electron mobility and therefore the power-electronics figure of merit. As a result, Al compositions greater than 75% are required to obtain even a two-fold increase of the Baliga figure of merit compared to GaN. However, beyond approximately 80% Al composition, donors in AlGaN undergo the DX transition which makes impurity doping increasingly more difficult. Moreover, the contact resistance increases exponentially with increasing Al content, and integration with dielectrics becomes difficult due to the upward shift of the conduction band. Atomically thin superlattices of AlN and GaN, also known as digital alloys, are known to grow experimentally under appropriate growth conditions. These chemically ordered nanostructures could offer significantly enhanced figure of merit compared to their random-alloy counterparts due to the absence of alloy scattering, as well as better integration with contact metals and dielectrics. In this work, we investigate the electronic structure and phonon-limited electron mobility of atomically thin AlN/GaN digital-alloy superlattices using first-principles calculations based on density-functional and many-body perturbation theory. The band gap of the atomically thin superlattices reaches 4.8 eV, and the in-plane (out-of-plane) mobility is 369 (452) cm$^2$ V$^{-1}$ s$^{-1}$. Using the modified Baliga figure of merit that accounts for the dopant ionization energy, we demonstrate that atomically thin AlN/GaN superlattices with a monolayer sublattice periodicity have the highest modified Baliga figure of merit among several technologically relevant ultra-wide band-gap materials, including random AlGaN, $\beta$-Ga$_{2}$O$_{3}$, cBN, and diamond.