Ferroelastic domain walls in BiFeO$_3$ as memristive networks

TL;DR

This paper demonstrates that dense networks of ferroelectric domain walls in BiFeO$_3$ can conduct electricity and exhibit resistive switching, suggesting their potential use as memristive networks for information processing.

Contribution

It reveals that wall-to-wall conduction and resistive switching occur in dense DW networks in BiFeO$_3$, opening avenues for memristive device applications.

Findings

Electronic transport occurs across dense DW networks.

Resistive switching is induced selectively at DWs.

Potential for DW networks in memristive computing.

Abstract

Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. In this work, it is shown that electronic transport is possible also from wall to wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscope (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step towards investigating DWs as memristive networks for information processing and in-materio computing.