Dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ alloy thin films
Michael Seifert (1, 2), Evgeny Kr\"uger (3), Michael S. Bar (3),, Stefan Merker (4), Holger von Wenckstern (3), Harald Krautscheid (4), Marius, Grundmann (3), Chris Sturm (3), Silvana Botti (1, 2) ((1) Institut, f\"ur Festk\"orpertheorie und Optik

TL;DR
This study combines spectroscopic ellipsometry and first-principles calculations to analyze the dielectric properties and electronic structure of CuBr$_x$I$_{1-x}$ alloy thin films, revealing how composition affects bandgap and spin-orbit splitting.
Contribution
It provides a comprehensive analysis of the dielectric function and electronic transitions in CuBr$_x$I$_{1-x}$ alloys, integrating experimental and theoretical approaches for the first time.
Findings
Bandgap bowing varies with alloy composition.
Spin-orbit splitting decreases with increasing Br concentration.
Electronic transitions are linked to specific k-points in the Brillouin zone.
Abstract
We study the dielectric function of CuBrI thin film alloys using spectroscopic ellipsometry in the spectral range between 0.7 eV to 6.4 eV, in combination with first-principles calculations based on density functional theory. Through the comparison of theory and experiment, we attribute features in the dielectric function to electronic transitions at specific k-points in the Brillouin zone. The observed bandgap bowing as a function of alloy composition is discussed in terms of different physical and chemical contributions. The band splitting at the top of the valence band due to spin-orbit coupling is found to decrease with increasing Br-concentration, from a value of 660 meV for CuI to 150 meV for CuBr. This result can be understood considering the contribution of copper d-orbitals to the valence band maximum as a function of the alloy composition.
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Taxonomy
TopicsCopper Interconnects and Reliability · Surface and Thin Film Phenomena · Semiconductor materials and devices
