Thickness-Dependent Magneto Transport of Bi2Se3/SiO2 Topological Insulator thin films

TL;DR

This study explores how the thickness of Bi2Se3 topological insulator thin films influences their surface and bulk transport properties, revealing a thickness-dependent weak anti-localization effect and proposing these films as topological Anderson insulators.

Contribution

It provides new insights into the thickness-dependent magneto-transport behavior of Bi2Se3 thin films and demonstrates their potential as topological Anderson insulators.

Findings

Thickness affects weak anti-localization in Bi2Se3 films

Films exhibit impurity-free surface states confirmed by characterization

Proposes Bi2Se3/SiO2 as a candidate for topological Anderson insulators

Abstract

Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different thicknesses of bismuth selenide thin films are deposited on the 250 nm SiO2 substrate with the help of thermal deposition. The motive of this study is to investigate the surface and bulk-related behaviour with different thicknesses. The deposited films are characterized through GI-XRD (grazing incidence X-ray diffractometer) and Raman spectroscopy, which ensure the impurity less deposition. Further, the transport properties are investigated, which shows thickness dependence of weak anti-localization effect (WAL) in the system and proposed these Bi2Se3/SiO2 thin films as a topological Anderson insulator (TAI).