High-responsivity MoS$_2$ hot-electron telecom-band photodetector integrated with microring resonator

TL;DR

This paper presents a high-responsivity MoS2 hot-electron photodetector integrated with a microring resonator, achieving enhanced detection efficiency in the telecom band for integrated optoelectronic applications.

Contribution

The work introduces a novel integration of Au-MoS2 junction with a silicon nitride microring resonator to significantly improve hot-electron injection and responsivity in the telecom wavelength range.

Findings

Achieved responsivity of 154.6 mA/W at 1516 nm

Maintained uniform responsivity over 1500-1630 nm

Demonstrated potential for integrated optoelectronic systems

Abstract

We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS$_2$ junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS$_2$ Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500 nm-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.