Kinetics and Parameters of Epitaxial Monolayered Continuous large area Molybdenum disulfide Growth

TL;DR

This study investigates the growth parameters affecting the morphology and coverage of large-area monolayer MoS₂ films via CVD, providing a recipe for optimized optoelectronic device applications.

Contribution

It systematically analyzes the effects of MoO₃ weight fraction and carrier gas flow rate on MoS₂ monolayer growth, offering new insights into controlling crystallinity and coverage.

Findings

MoO₃ concentration influences nucleation density and morphology.

Higher carrier gas flow increases coverage area but reduces crystallite size.

Optimized parameters enable large-area monolayer MoS₂ suitable for optoelectronics.

Abstract

The growth of large crystallite continuous monolayer materials like molybdenum disulfide (MoS$_2$) with desired morphology via chemical vapor deposition (CVD) remains a challenge. In CVD, the complex interplay of various factors like growth temperature, precursors, and nature of the substrate decides the crystallinity, crystallite size, and coverage area of the grown MoS$_2$ monolayer. In the present work, we report about the role of weight fraction of molybdenum trioxide (MoO$_3$), Sulfur, and carrier gas flow rate towards nucleation and monolayer growth. The concentration of MoO$_3$ weight fraction has been found to govern the self-seeding process and decides the density of nucleation sites affecting morphology and coverage area. Carrier gas flow of 100 sccm argon results into large crystallite continuous films with lower coverage area (70 %), while the flow rate of 150 sccm results into 92 % coverage area with reduced crystallite size. Through systematic variation of experimental parameters, we have established the recipe for the growth of large crystallite atomically thin MoS$_2$ suitable for optoelectronic devices.