Systematic Investigation of Millimeter-Wave Optic Modulation Performance in Thin-Film Lithium Niobate
Yiwen Zhang, Linbo Shao, Jingwei Yang, Zhaoxi Chen, Ke Zhang, Kam-Man, Shum, Di Zhu, Chi Hou Chan, Marko Lon\v{c}ar, Cheng Wang

TL;DR
This paper systematically investigates the performance of thin-film lithium niobate mmWave-optic modulators up to 325 GHz, providing models, measurements, and design guidelines for future high-frequency photonic systems.
Contribution
It offers a comprehensive analysis combining theoretical modeling, experimental verification, and measurement of mmWave-optic modulators at ultrahigh frequencies.
Findings
Achieved a 3-dB bandwidth of 170 GHz and 6-dB bandwidth of 295 GHz.
Measured a low RF half-wave voltage of 7.3 V at 250 GHz.
Provided design guidelines for mmWave-optic modulators.
Abstract
Millimeter-wave (mmWave) band (30 - 300 GHz) is an emerging spectrum range for wireless communication, short-range radar and sensor applications. mmWave-optic modulators that could efficiently convert mmWave signals into optical domain are crucial components for long-haul transmission of mmWave signals through optical networks. At these ultrahigh frequencies, however, the modulation performances are highly sensitive to the transmission line loss as well as the velocity- and impedance-matching conditions, while precise measurements and modeling of these parameters are often non-trivial. Here we present a systematic investigation of the mmWave-optic modulation performances of thin-film lithium niobate modulators through theoretical modeling, electrical verifications and electro-optic measurements at frequencies up to 325 GHz. Based on our experimentally verified model, we demonstrate…
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