Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters

TL;DR

This study investigates the temperature-dependent decoherence mechanisms in GaN single-photon emitters, revealing optical phonon interactions as a key factor influencing linewidth broadening across a wide temperature range.

Contribution

The paper introduces a model linking optical phonon absorption/emission to decoherence in GaN SPEs, explaining linewidth behavior from 10 K to 270 K, a novel insight for nitride-based quantum emitters.

Findings

Linewidth is temperature independent below ~50 K due to spectral diffusion.

Linewidth increases monotonically above ~50 K, deviating from a power law.

Optical phonon interactions explain the linewidth broadening across the studied temperature range.

Abstract

In most single-photon defect emitters, such as those in SiC and diamond, interaction with low-energy acoustic phonons determines the temperature dependence of the decoherence rate and the resulting broadening of the ZPL with the temperature obeys a power law. GaN hosts bright and stable single-photon emitters in the 600 nm to 700 nm wavelength range with strong ZPLs even at room temperature. In this work, we study the temperature dependence of the ZPL spectra of GaN SPEs integrated with solid immersion lenses with the goal of understanding the relevant decoherence mechanisms. At temperatures below ~50 K, the ZPL lineshape is found to be Gaussian and the ZPL linewidth is temperature independent and dominated by spectral diffusion. Above ~50 K, the linewidth increases monotonically with the temperature and the lineshape evolves into a Lorentzian. Quite remarkably, the temperature dependence of the linewidth does not follow a power law. We propose a model in which decoherence caused by absorption/emission of optical phonons in an elastic Raman process determines the temperature dependence of the lineshape and the linewidth. Our model explains the temperature dependence of the ZPL linewidth and lineshape in the entire 10 K to 270 K temperature range explored in this work. The ~19 meV optical phonon energy extracted by fitting the model to the data matches remarkably well the ~18 meV zone center energy of the lowest optical phonon band (E2(low)) in GaN. Our work sheds light on the mechanisms responsible for linewidth broadening in GaN SPEs. Since a low energy optical phonon band (E2(low)) is a feature of most group III-V nitrides with a wurtzite crystal structure, including hBN and AlN, we expect our proposed mechanism to play an important role in defect emitters in these materials as well.