Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers

TL;DR

This paper proposes a new, general mechanism for realizing layer-polarized anomalous Hall effect in valleytronic van der Waals bilayers through interlayer sliding, enabling ferroelectric control and reversibility.

Contribution

It introduces a novel mechanism based on interlayer sliding to achieve LP-AHE in valleytronic bilayers, expanding beyond topological systems.

Findings

Demonstrates LP-AHE in multiple valleytronic materials.

Shows strong coupling between ferroelectricity and AHE.

Provides a pathway for ferroelectrically controllable electronic devices.

Abstract

Layer-polarized anomalous Hall effect (LP-AHE), derived from the coupling between Berry curvature and layer degree of freedom, is of importance for both fundamental physics and device applications. Nonetheless, the current research paradigm is rooted in topological systems, rendering such phenomenon rather scarce. Here, through model analysis, we propose an alternative, but general mechanism to realize the LP-AHE in valleytronic van der Waals bilayers by interlayer sliding. The interaction between the out-of-plane ferroelectricity and A-type antiferromagnetism gives rise to the layer-locked Berry curvature and thus the long-sought LP-AHE in the bilayer systems. The LP-AHE can be strongly coupled with sliding ferroelectricity, to enable ferroelectrically controllable and reversible. The mechanism is demonstrated in a series of real valleytronic materials, including bilayer VSi2P4, VSi2N4, FeCl2, RuBr2 and VClBr. The new mechanism and phenomena provide a significant new direction to realize LP-AHE and explore its application in electronics.