P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

TL;DR

This paper demonstrates a high-quality p-type ohmic contact to monolayer WSe2 using amorphous MoO3 with high electron affinity, enabling improved electronic contact performance.

Contribution

The study introduces a novel method of forming p-type ohmic contacts on monolayer WSe2 with amorphous MoO3, advancing contact engineering for 2D materials.

Findings

Achieved low contact resistance with MoO3 contacts.

Demonstrated stable p-type conduction in WSe2.

Enhanced device performance due to improved contact quality.

Abstract

1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia