Magnetic topological transistor exploiting layer-selective transport

TL;DR

This paper introduces a magnetic topological transistor using MnBi₂Te₄ that switches between conducting and insulating states via electric field orientation, leveraging topology, magnetism, and layer control.

Contribution

It proposes a novel layer-selective topological transistor mechanism based on MnBi₂Te₄, demonstrating robust on/off states influenced by magnetic order and film thickness.

Findings

The transistor's conductance states can be switched by electric field orientation.

The device's performance is robust against disorder due to topological protection.

Layer and magnetic order significantly influence the device's behavior.

Abstract

We propose a magnetic topological transistor based on MnBi$_{2}$Te$_{4}$, in which the "on" state (quantized conductance) and the "off" state (zero conductance) can be easily switched by changing the relative direction of two adjacent electric fields (parallel vs. antiparallel) applied within a two-terminal junction. We explain that the proposed magnetic topological transistor relies on a novel mechanism due to the interplay of topology, magnetism, and layer degrees of freedom in MnBi$_{2}$Te$_{4}$. Its performance depends substantially on film thickness and type of magnetic order. We show that "on" and "off" states of the transistor are robust against disorder due to the topological nature of the surface states. Our work opens an avenue for applications of layer-selective transport based on the topological van der Waals antiferromagnet MnBi$_{2}$Te$_{4}$.