Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

TL;DR

This paper uncovers the universal origin of the layer Hall effect in antiferromagnetic insulators, attributing it to hidden Berry curvature, and offers design principles for materials exhibiting this phenomenon.

Contribution

It introduces the concept of hidden Berry curvature as the fundamental cause of the layer Hall effect and provides a general framework applicable to various materials.

Findings

Layer Hall effect is enhanced in antiferromagnetic topological insulators.

Hidden Berry curvature exists in real space but not in momentum space.

The framework can be applied to design new materials with layer Hall effects.

Abstract

The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but nonzero layer-locked hidden Berry curvature in real space. We show that compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios.