Nanoscale 3D tomography by in-flight fluorescence spectroscopy of atoms sputtered by a focused ion beam
Garrett Budnik, John Scott, Chengge Jiao, Mostafa Maazouz, Galen, Gledhill, Lan Fu, Hark Hoe Tan, Milos Toth

TL;DR
This paper introduces FIB-induced fluorescence spectroscopy (FIB-FS), a high-resolution, high-sensitivity 3D nanoscale technique for atom detection and tomography during focused ion beam processing, applicable to all elements and real-time analysis.
Contribution
The paper presents FIB-FS as a novel method combining FIB nanofabrication with fluorescence spectroscopy for 3D nanoscale atom detection and tomography.
Findings
Demonstrated nanoscale lateral and depth resolution limited by ion-induced intermixing.
Qualitative depth-profiling of quantum wells at nanometer scale.
Quantitative detection of trace impurities at parts-per-million levels.
Abstract
Nanoscale fabrication and characterisation techniques critically underpin a vast range of fields, including materials science, nanoelectronics and nanobiotechnology. Focused ion beam (FIB) techniques are particularly appealing due to their high spatial resolution and widespread use for processing of nanostructured materials and devices. Here, we introduce FIB-induced fluorescence spectroscopy (FIB-FS) as a nanoscale technique for spectroscopic detection of atoms sputtered by an ion beam. We use semiconductor heterostructures to demonstrate nanoscale lateral and depth resolution and show that it is limited by ion-induced intermixing of nanostructured materials. Sensitivity is demonstrated qualitatively by depth-profiling of 3.5, 5 and 8 nm quantum wells, and quantitatively by detection of trace-level impurities present at parts-per-million levels. To showcase the utility of the FIB-FS…
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