Extrinsic tunnel Hall effect in CoFeB/MgO/Pt junctions
I. Yu. Pashenkin, M. V. Sapozhnikov, N. S. Gusev, E. A. Karashtin, A., A. Fraerman

TL;DR
This paper investigates the nonlinear Hall effect in CoFeB/MgO/Pt tunnel junctions, revealing contributions from known effects and a novel quadratic spin-orbit scattering phenomenon induced by high electric fields.
Contribution
It introduces the observation of a quadratic Hall effect caused by spin-orbit scattering in tunnel junctions, expanding understanding of spin-dependent transport phenomena.
Findings
Linear Hall component includes anomalous and inverse spin-Hall effects.
Quadratic Hall component arises from spin-orbit scattering under high electric fields.
Effect magnitude decreases with increasing platinum thickness due to shunting.
Abstract
The Hall effect that occurs when current flows through a CoFeB/MgO/Pt tunnel junction is investigated. It is shown that the transverse voltage in Pt electrode is nonlinear on a DC voltage applied to the tunnel junction. It has both linear (odd) and quadratic (even) parts. The linear part contains well-known contributions of the anomalous Hall effect in the ferromagnetic electrode, inverse spin-hall effect in platinum and others. The quadratic part is a phenomenon caused by the spin-orbit scattering of electrons in an external electric field induced by a voltage applied to the barrier. This field reaches values of V/m which is close to internal atomic fields. The magnitude of both effects decreases as thickness of Pt electrode is increased due to shunting effects.
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Taxonomy
TopicsMagnetic properties of thin films · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
