Simulation of the 4H-SiC Low Gain Avalanche Diode

TL;DR

This paper simulates 4H-SiC Low Gain Avalanche Diodes (LGADs) for particle detection, analyzing design parameters and electric field configurations to optimize performance and understand trade-offs.

Contribution

It introduces a simulation-based study of 4H-SiC LGADs, providing design guidance and comparative analysis of two electric field configurations.

Findings

Optimal gain layer thickness of 0.5 μm identified

Simulation results compare leakage current, capacitance, and gain for two designs

Advantages and disadvantages of each design are discussed

Abstract

Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time performance. Therefore, the 4H-SiC LGAD is introduced in this work for application to detect the Minimum Ionization Particles (MIPs). We provide guidance to determine the thickness and doping level of the gain layer after an analytical analysis. The gain layer thickness $d_{gain}=0.5~\mu m$ is adopted in our design. We design two different types of 4H-SiC LGAD which have two types electric field, and the corresponding leakage current, capacitance and gain are simulated by TCAD tools. Through analysis of the simulation results, the advantages and disadvantages are discussed for two types of 4H-SiC LGAD.