Emergence of Rashba splitting and spin-valley properties in Janus MoGeSiP2As2 and WGeSiP2As2 monolayers

TL;DR

This study uses first-principles calculations to reveal that Janus MoGeSiP2As2 and WGeSiP2As2 monolayers exhibit Rashba spin splitting and spin-valley properties, promising for spintronics and valleytronics applications.

Contribution

It demonstrates the structural stability and spintronic properties of these novel Janus monolayers, highlighting their potential in advanced electronic devices.

Findings

Janus monolayers are structurally stable and experimentally accessible.

Breaking mirror symmetry induces Rashba-type spin splitting.

Large valley spin splitting enhances spintronics and valleytronics potential.

Abstract

First-principles calculations are performed to study the structural stability and spintronics properties of Janus MoGeSiP2As2 and WGeSiP2As2 monolayers. The high cohesive energies and the stable phonon modes confirm that both these structures are experimentally accessible. In contrast to pristine MoSi2P4, the Janus monolayers demonstrate reduced direct bandgaps and large spin-split states at K/-K. In addition, their spin textures exposed that breaking the mirror symmetry brings Rashba-type spin splitting in the systems which can be increased by using higher atomic spin-orbit coupling. The large valley spin splitting together with the Rashba splitting in these Janus monolayer structures can make a remarkable contribution to semiconductor valleytronics and spintronics.