Floquet engineering of titled and gapped Dirac materials
Andrii Iurov, Liubov Zhemchuzhna, Godfrey Gumbs, Danhong Huang, Kathy, Blaise, Chinedu Ejiogu

TL;DR
This paper develops a theoretical framework for Floquet engineering of 1T'-MoS2, showing how high-frequency fields can tailor its electronic properties, including bandgaps, anisotropy, and topological phases.
Contribution
It introduces a rigorous formalism for Floquet engineering in tilted Dirac materials, analyzing the effects of different polarization fields on electronic and topological properties.
Findings
Dressed states depend on polarization and reflect initial Hamiltonian complexity
Circular polarization induces topological phase transitions with non-zero Chern number
Analysis of symmetry, anisotropy, tilting, and bandgaps in dressed states
Abstract
We have established a rigorous theoretical formalism for Floquet engineering, or investigating and eventually tailoring most crucial electronic properties of tetragonal molybdenum disulfide (1T-MoS), by applying an external high-frequency dressing field in the off-resonant regime. It was recently demonstrated that monolayer semiconducting1T-MoS may assume a distorted tetragonal structure which exhibits tunable and gapped spin- and valley-polarized tilted Dirac bandstructure. From the viewpoint of electronics, 1T-MoS is one of the most technologically promising nanomaterials and a novel representative of an already famous family of transition metal dichalcogenides. The obtained dressed states strongly depend on the polarization of the applied irradiation and reflect the full complexity of the initial low-energy Hamiltonian of non-irradiated…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Machine Learning in Materials Science
