Preparation of large Cu3Sn single crystal by Czochralski method
Minsik Kong, Sang-Eon Park, Hye Jung Kim, Sehwan Song, Dong-Choon Ryu,, Baekjune Kang, Changhee Sohn, Hyun Jung Kim, Youngwook Kim, Sangmoon Yoon,, Ara Go, Hyoungjeen Jeen, Sungkyun Park, Se-Young Jeong, Chang-Jong Kang, Jong, Mok Ok
TL;DR
This paper reports the successful growth of large, high-quality Cu3Sn single crystals using the Czochralski method, enabling future exploration of its topological Dirac fermion properties.
Contribution
First demonstration of large Cu3Sn single crystals grown by Czochralski method, free from flux contamination, suitable for topological property investigations.
Findings
Crystals are free from flux contamination.
Crystals are significantly larger (cm-sized).
Crystal quality verified through structural and transport analysis.
Abstract
Cu3Sn was recently predicted to host topological Dirac fermions, but related research is still in its infancy. The growth of large and high-quality Cu3Sn single crystals is, therefore, highly desired to investigate the possible topological properties. In this work, we report the single crystal growth of Cu3Sn by Czochralski (CZ) method. Crystal structure, chemical composition, and transport properties of Cu3Sn single crystals were analyzed to verify the crystal quality. Notably, compared to the mm-sized crystals from a molten Sn-flux, the cm-sized crystals obtained by the CZ method are free from contamination from flux materials, paving the way for the follow-up works.
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