Individual addressing of trapped ion qubits with geometric phase gates

TL;DR

This paper introduces a novel method for individually addressing trapped ion qubits using motional frequency selection and geometric phase gates, enhancing speed and reducing decoherence.

Contribution

It presents a new scheme combining motional frequency selection with geometric phase gates for improved single-qubit operations in trapped ions.

Findings

Gate speed is increased by using spin-independent forces.

Cross-talk errors are reduced below 10^{-6} in simulations.

The scheme is applicable to most trapped ion setups.

Abstract

We propose a new scheme for individual addressing of trapped ion qubits, selecting them via their motional frequency. We show that geometric phase gates can perform single-qubit rotations using the coherent interference of spin-independent and (global) spin-dependent forces. The spin-independent forces, which can be generated via localised electric fields, increase the gate speed while reducing its sensitivity to motional decoherence, which we show analytically and numerically. While the scheme applies to most trapped ion experimental setups, we numerically simulate a specific laser-free implementation, showing cross-talk errors below $10^{-6}$ for reasonable parameters.