Full-band Monte Carlo simulation of two-dimensional electron gas in (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructures
Avinash Kumar, and Uttam Singisetti

TL;DR
This paper presents a comprehensive full-band Monte Carlo simulation of high-field electron transport in 2DEG within (Al$_{x}$Ga$_{1-x}$)$_{2}$O$_{3}$/Ga$_{2}$O$_{3}$ heterostructures, revealing insights into velocity saturation and phonon interactions.
Contribution
It introduces a detailed simulation framework combining first-principles parameters with Monte Carlo methods for 2DEG in Ga$_{2}$O$_{3}$ heterostructures, advancing understanding of high-field transport.
Findings
Peak electron velocity increases with higher 2DEG density.
Critical field for velocity saturation remains similar to bulk values.
Antiscreening of LO phonons significantly affects low-density 2DEG transport.
Abstract
-Gallium Oxide (GaO) is an extensively investigated ultrawide-bandgap semiconductor for potential applications in power electronics and RF switching. The room temperature bulk electron mobility (200 cmVs) is comparatively low and is limited by the 30 phonon modes originating from its 10-atom primitive cell. The theoretically calculated saturation velocity is 1-210 cms which is comparable to GaN. The high field electron transport in the 2DEG is explored in this work based on the first principles calculated parameters. A self-consistent calculation on a given heterostructure design gives the confined eigenfunctions and eigenenergies. The intrasubband and the intersubband scattering rates are calculated based on the Fermi's golden rule considering LO phonon-plasmon screening. The high field characteristics are extracted from…
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Taxonomy
TopicsGa2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
