Grain Boundary Development of Silicon during Directional Solidification: A Phase-Field Study
Chuanqi Zhu, Yuichiro Koizumi, Chunwen Guo

TL;DR
This study uses a phase-field model to simulate silicon grain boundary development during directional solidification, revealing how growth velocity and surface morphology influence boundary orientation, aiding in optimizing silicon microstructure for solar cells.
Contribution
The paper introduces a phase-field simulation incorporating anisotropic energies to predict silicon grain boundary evolution during directional solidification, providing new insights into microstructure control.
Findings
GB direction governed by kinetic or equilibrium rule depending on growth conditions
Facet-facet grooves lead to GB bisector alignment
Rough grooves cause GB to deviate from bisector
Abstract
In order to control the grain structure of multi-crystalline (mc) silicon during directional solidification, the development process of grain boundaries (GBs) with respect to the temperature gradient should be understood. A phase-field model incorporated with anisotropic interface energy and anisotropic attachment kinetic coefficient has produced the faceted shape of a growing silicon crystal, which is in agreement with experimental observation. The growth of coupled silicon grains under various growth velocities has been simulated to see the morphology of the solid-liquid front and the development process of the GBs. It has been found that the direction of GB is governed by either the kinetic rule or the equilibrium rule at the grain groove, depending on the growth velocity and the orientation relationship between grains on two sides. The GB beneath a groove with facet-facet surfaces…
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Taxonomy
TopicsSolidification and crystal growth phenomena · Silicon and Solar Cell Technologies · Aluminum Alloy Microstructure Properties
