Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

TL;DR

This paper presents a novel hybrid electroluminescent device combining GaN micro-LEDs with monolayers of transition metal dichalcogenides, enabling low-temperature operation and single-photon emission.

Contribution

The work introduces a new device architecture that integrates micro-LEDs with TMD monolayers for enhanced electroluminescence and single-photon source applications.

Findings

Device operates at low temperatures.

WSe₂ monolayer acts as a single-photon source.

Hybrid device demonstrates electroluminescence from TMD monolayers.

Abstract

We demonstrate a novel electro-luminescence device in which GaN-based $\mu$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $\mu$-LED surface. A special $\mu$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to act as a stand-alone, electrically-driven single-photon source.